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Heterostructures are formed from multiple heterojunctions, and thus a myriad of possibilities exist. If a thin layer of a narrower-bandgap material 'A' say, is sandwiched between two layers of a wider-bandgap material 'B', as illustrated in Fig. 1.9 (left) then they form a double heterojunction. If layer 'A' is sufficiently thin for quantum properties to be exhibited, then such a band alignment is called a single quantum well. If any charge carriers exist in the system, whether thermally produced intrinsic or extrinsic as the result of doping, they will attempt to lower their energies. Hence in this example, any electrons (solid circles) or holes (open circles) will collect in the quantum well (see Fig. 1.9). Additional semiconductor layers can be included in the

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Substituting equals for equals (x ^ 0 for -x = |x|), we have thus verified the correctness of the first assignment. Also, again using the assignment axiom,

Figure 1.10 The one-dimensional potentials V(z) in the conduction and valence band for typical symmetric (left) and asymmetric (right) double quantum wells

x ^ O = x=\x\

1.0' 0.75

heterostructure, for example a stepped or asymmetric quantum well can be formed by the inclusion of an alloy between materials A and B, as shown in Fig. 1.9 (right).

Substituting equals for equals again (this time x ^ 0 for x = \ x \ ), the second assignment is valid. We conclude that the conditional statement correctly assigns the absolute value of x to y. The Conditional Rule. The above discussion can be summarized by saying that the proposition

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Figure 1.11 The one-dimensional potentials V(z) in the conduction and valence band for a typical multiple quantum well or superlattice

{ Q )

1 2 3 4 5 6 7 8

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Still more complex structures can be formed, such as symmetric or asymmetric double quantum wells, (see Fig .1.10) and multiple quantum wells or superlattices (see Fig. 1.11). The difference between the latter is the extent of the interaction between the quantum wells; in particular, a multiple quantum well exhibits the properties of a collection of isolated single quantum wells, whereas in a superlattice the quantum wells do interact. The motivation behind introducing increasingly complicated structures is an attempt to tailor the electronic and optical properties of these materials for exploitation in devices. Perhaps the most complicated layer structure to date is the chirped superlattice active region of a mid-infrared laser [16]. All of the structures illustrated so far have been examples of Type-I systems. In this type, the bandgap of one material is nestled entirely within that of the wider-bandgap material. The consequence of this is that any electrons or holes fall into quantum wells which are within the same layer of material. Thus both types of charge carrier are

is equivalent to the conjunction of three propositions: [P => blvb2] , {PAbl }Sl { Q } ,

function reaches zero between the wells. It should be noted, however, that the effect of finiteness is still apparent in that the probability of the electron being in any of the quantum wells is not equal. 3.11 ADDITION OF ELECTRIC FIELD

{PAb2 } S2 { Q } .

1 2 3 4 5 6 7

Figure 3.21 Schematic illustration of the tilting of the conduction and valence bands under the influence of an electric field

1 29

Unlike the previous analytical forms for the solution of Schrodinger's equation (described in 2), the numerical solution which includes the effect of an electric field on a heterostructure is simplicity itself. The potential energy is simply added to the potential term within the appropriate shooting equation (equations (3.11) or (3.53)), i.e. where for an electron, q = e and for a hole, q = +e. The position ZQ represents the origin of the field, often chosen to be the centre of the well. Fig. 3.21 shows the effect of an electric field on both the conduction- and valence-band potentials; note that increasing hole energies are measured downwards. Thus, any electrons in the double well are pulled to the right-hand side, while holes are pulled to the left, thus producing space charge or a polarisation of the carriers. 3.12 QUANTUM CONFINED STARK EFFECT Section 2.12 demonstrated through perturbation theory the well known phenomenon of the quantum-confined Stark effect. Fig. 3.22 illustrates this energy level suppression as a function of field for the ground state of a single quantum well. In order to validate the perturbation theory approach of earlier, the curve represents a parabolic fit to the calculated data which are displayed as points on the figure. It

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