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Next, you need to de ne a Medium for your e-mail The Medium helps you compare the different methods for marketing to people It may seem silly, but email is the Medium for e-mail By using the value of email for all e-mail you send, you can identify the impact that e-mail has on your business Remember, consistency matters when it comes to campaign tracking A simple discrepancy such using e-mail instead of email as the Medium value can cause trouble when analyzing your data Now, you need to de ne values for the utm_source parameter Remember, Source helps you understand more about the e-mail the visitor received This value can be as simple as newsletter, special offer, or another value that indicates which e-mail you sent to the recipient But you can do even more with Source.

to abandon the feature of byte alterability in favor of simpler devices By allowing one of the write operations to be a block operation, it is not necessary to provide inhibition for one of the write operations This extra freedom has been exploited in a wide variety of cells and arrays Obviously, the byte-writable cells described previously can be simplified slightly, which has been done, but the real area reductions have been achieved with novel approaches Some of the approaches utilize hot electron injection for programming and FN tunneling for erase; others use FN tunneling for both programming and erase Some of the approaches that have met with the most commercial success will be described in the following sections T-Cell Flash EEPROM The cell structure, array architecture, operation and reliability of T-cell flash memory has been discussed extensively.

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A user may be initially identified to SQL Server via one of three methods: Windows user login Membership in a Windows user group SQL Server specific login (if the server uses mixed-mode security) At the server level, the user is known by his or her LoginID, which is either his or her SQL Server login, or his or her Windows domain and user name. Once the user is known to the server and identified, the user has whatever server-level administrative rights have been granted via fixed server roles. If the user belongs to the sysadmin role, he or she has full access to every server function, database, and object in the server. A user can be granted access to a database, and his or her network login ID can be mapped to a database-specific user ID in the process. If the user doesn t have access to a database, he or she can gain access as the guest user with some configuration changes within the database server.

43- 46 The one-transistor, T-cell, flash memory array has evolved from the conventional T-cell EPROM technology The top view and cross section through the transistor parallel to the word line are the same as that shown in Figure 814 The gate oxide is thinned to ,- 10 nm to allow the cells to be erased by FN tunneling from the floating gate to the substrate or the source For some erase schemes, the source diffusion is modified as discussed in the following paragraphs The cells are programmed the same way as the T-cell EPROM is programmed Because the flash memories are usually intended for applications involving insystem programming, it is common for the memories to have circuitry to implement algorithms for efficient programming and threshold margin measurement designed into the memory chips rather than relying on intelligence in a programming system as is the usual case for EPROMs.

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The read operation and design considerations for T-cell flash memory arrays also mirror those for T-cell EPROM memory arrays Erase can be accomplished by causing electrons to tunnel either to the source or to a p well 47 Tunneling to the source is very nonuniform, while tunneling to a p well provides uniform erase There are advantages and disadvantages to both approaches Tunneling to the source involves biasing the source to a high positive potential with respect to the floating gate so that a high field is established across the gate oxide separating the junction from the floating gate This causes a high field in the silicon in the vicinity of the junction as illustrated in Figure 89 If the junction is abrupt, there is a real possibility that the high field in the silicon will lead to gateaided breakdown.

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